2N3819 TRANSISTOR N-CHANNEL JFET

CARACTERISTIQUES TECHNIQUES : MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Gate Voltage VDG 25 V Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS 25 V Continuous Gate Current IG 10 mA Power Dissipation PD 360 mW Operating and Storage Junction Temperature TJ, Tstg -65 to 150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS I GSS VGS=15V 2.0 nA I GSS VGS=15V, TA=100°C 2.0 μA I DSS VDS=15V 2.0 20 mA BVGSS IG=1.0μA 25 V VGS(OFF) VDS=15V, ID=2.0nA 8.0 V VGS VDS=15V, ID=200μA 0.5 7.5 V |Yfs| VDS=15V, VGS=0, f=1.0MHz 2.0 6.5 mS |Yfs| VDS=15V, VGS=0, f=100MHz 1.6 mS |Yos| VDS=15V, VGS=0, f=1.0kHz 50 μS Ciss VDS=15V, VGS=0, f=1.0MHz 8.0 pF Crss VDS=15V, VGS=0, f=1.0MHz 4.0 pF